|
| 84 |
D. Bisero, F. Corni, G. Ottaviani, R. Tonini and L. Pavesi, "Radiation damage induced
infrared light emission in crystalline silicon", Solid State Communication 101, 889-891 (25
Feb 1997).
|
| 85 |
N. Galbiati, E. Grilli, M. Guzzi, P. Albertini, L. Brusaferri, L. Pavesi, M. Henini, A.
Gasparotto, "Investigation of Si as n-type dopant in AlGaAs grown by molecular beam epitaxy
on high index planes", Semiconductor Science and Technology 12, 555-563 (May 1997).
|
| 86 |
L. Pavesi and P. Dubos, "Random porous silicon multilayers: application to distributed Bragg
reflectors and interferential Fabry-Perot filters", Semiconductor Science and Technology 12,
570-575 (May 1997).
|
| 87 |
M. Cazzanelli and L. Pavesi, "Time resolved photoluminescence of all porous silicon
microcavities", Phys. Rev. B. (15 dec 1997).
|
| 88 |
N. Galbiati, C. Gatti, E. Grilli, M. Guzzi, L. Pavesi, M. Henini, "Photoluminescence
determination of the Be binding energy in direct gap AlGaAs", Appl. Phys. Lett. (24 nov
1997).
|
| 89 |
L. Pavesi, R. Guardini and P. Bellutti, "Porous silicon n/p light emitting diode", Thin Solid
Films 297, 272-276 (April 1997).
|
| 90 |
L. Pavesi, M. Cazzanelli, and O. Bisi," Enhancement of the sponaneous emission rates in all
porous silicon microcavities", in Advances in Microcrystalline and Nanocrystalline
Semiconductors-1996, ed. P. M. Fauchet, R. W. Collins, P. A. Alivisatos, I. Shimizu, T.
Shimada, J. -C. Vial, Materials Research Society Symposium Proceedings vol. 452, 717-722
(1997).
|
| 91 |
L. Pavesi, and M. Henini, "Photoluminescence investigation of Si-doped GaAs
grown by molecular beam epitaxy on non-(100) oriented surfaces", Microelectronics Journal.
|
| 92 |
N. Galbiati, E. Grilli, M. Guzzi, M. Henini and L. Pavesi, "Is the Be incorporation the same in
(311)A and (100) AlGaAs?", Microelectronics Journal.
|
| 93 |
M. Henini, N. Galbiati, E. Grilli, M. Guzzi, and L. Pavesi, "Photluminescence investigation of
p-type Si-doped AlGaAs grown by molecular beam epitaxy on (111)A, (211)A and (311)A
GaAs surfaces", J. Cryst. Growth 175/176, 1108-1113 (1996).
|
| 94 |
M. Cazzanelli, L. Pavesi, O. Bisi, P. Dubos, P. Bellutti, G. Soncini, G. Faglia, G. Sberveglieri,
"On the route towards light emitting diodes based on porous silicon", Defect and Diffusion
Forum, (Trans Tech pubblications, 1997).
|
| 95 |
A. Misiuk, G. P. Karwasz, M. Cazzanelli, W. Jung, and L. Pavesi, "Effect of annealing under
uniform stress on photoluminescence, electrical and structural properties of silicon", Materials
Research Society Symposium Proceedings vol. 469 (1997) 245.
|
| 96 |
L. Pavesi
"Porous silicon dielectric multilayers and microcavities"
, La Rivista del Nuovo Cimento 20 1-76 (1997).
|
[To Top] [Prev][Next]
|
Back