|
| 16 |
L. Pavesi and P. Giannozzi, "H passivation of Si impurities in GaAs", Physical Review Rapid
Communications B 43, 2446-2449 (15 Jannuary 1991).
|
| 17 |
Nguyen Hong Ky, L. Pavesi, D. Araujo, JD. GaniŠre and FK. Reinhart , "A model for the Zn
diffusion in GaAs by a photoluminescence study", Journal of Applied Physics 69, 7585-7593
(1 June 1991).
|
| 18 |
L. Pavesi, F. Piazza, A. Rudra, JF. Carlin and M. Ilegems, "Temperature dependence of the
InP band gap from a photoluminescence study", Physical Review B 44, 9052-9055 (15
October 1991).
|
| 19 |
Nguyen Hong Ky, L. Pavesi, D. Araujo, JD. GaniŠre and FK. Reinhart , "Thermal conversion
of n-type GaAs:Si to p type in excess arsenic vapor", Journal of Applied Physics 70, 3887-
3891 (1 October 1991).
|
| 20 |
V. Capozzi, L. Pavesi and JL. Staehli, "Luminescence from exciton-free carrier collisions in
GaSe", Journal of Luminescence 48&49, 111-115 (1991).
|
| 21 |
L. Pavesi and P. Giannozzi, "First-principles calculations of hydrogen in bulk GaAs", Physica
B170, 392-396 (1991).
|
| 22 |
A. Bosacchi, S. Franchi, L. Vanzetti, P. Allegri, E. Grilli, M. Guzzi, R. Zamboni and L. Pavesi,
"A photoluminescence study of the effects of hydrogen on deep levels in MBE grown
GaAlAs:Si", Physica B170, 540-544 (1991).
|
| 23 |
L. Pavesi, D. Araujo, Nguyen Hong Ky, JD. Gani‚re, FK. Reinhart, PA. Buffat and G. Burri,
"Zinc diffusion in GaAs and zinc-induced disordering of GaAs/AlGaAs multiple quantum
wells: a multitechnique study", Optical and Quantum Electronics 23, S789-S804 (1991).
|
| 24 |
A. Rudra, JF. Carlin, L. Pavesi, F. Piazza, M. Proctor and M. Ilegems, "High purity InP grown
by Chemical Beam Epitaxy", Journal of Electronics Materials 20, 1087-1090 (1991).
|
| 25 |
D. Araujo, L. Pavesi, Nguyen Hong Ky, JD. GaniŠre and FK. Reinhart, "Cathodoluminescence
and electron beam induced current study of hydrogen treatment of p-n GaAs junction", Journal
de Physique IV, vol. 1, Colloque C6-225-C6-230 (d‚cembre 1991)
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