|
| 59 |
L. Pavesi, M. Henini, D. Johnston and I. Harrison, "A comparison of Si doped (100), (111)A,
(111)B and (311)B AlxGa1-xAs samples grown by molecular beam epitaxy", Semiconductor
Science and Technology 10, 49-55 (1995).
|
| 60 |
L. Pavesi, M. Henini and D. Johnston, "Influence of the As overpressure during the molecular
beam epitaxy growth of Si-doped (211)A and (311)A GaAs", Applied Physics Letters 66,
2846-2848 (22 May 1995).
|
| 61 |
L. Pavesi, R. Houdr‚ and P. Giannozzi, "Strain and alloying effects on the electronic and
vibrational properties of InyAl1-yAs on InP", Journal of Applied Physics 78, 470-477 (1 July
1995).
|
| 62 |
G. F. Cerofolini, R. Balboni, D. Bisero, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, RS.
Brusa, A. Zecca, M. Ceschini, G. Giebel and L. Pavesi, "Hydrogen precipitation in highly
oversaturated single-crystalline silicon", physica status solidi (a) 150, 539-586 (1995).
|
| 63 |
G. Giebel and L. Pavesi, "About the I-V characteristic of metal-porous silicon diodes",
physica status solidi (a) 151, 355-361 (1995).
|
| 64 |
C. Mazzoleni and L. Pavesi, "Application to optical components of dielectric porous silicon
multilayers", Applied Physics Letters 67, 2983-2985 (13 November 1995).
|
| 65 |
L. Pavesi, C. Mazzoleni, A. Tredicucci and V. Pellegrini, "Controlled photon emission in
porous silicon microcavities", Applied Physics Letters 67, 3280-3282 (27 November 1995).
|
| 66 |
V. Pellegrini, A. Tredicucci, C. Mazzoleni and L. Pavesi, "Enhanced optical properties in
porous silicon microcavities", Physical Review Rapid Communications B 52, R14328-R14331
(15 November 1995).
|
| 67 |
D. Bisero, F. Corni, C. Nobili, R. Tonini, G. Ottaviani, C. Mazzoleni and L. Pavesi, "Visible
photoluminescence from He-implanted silicon", Applied Physics Letters 67, 3447 (1995).
|
| 68 |
L. Pavesi, M. Ceschini and HE. Roman, "Recombination dynamics in porous silicon", Thin
Solid Films 255, 67-69 (1995).
|
| 69 |
L. Pavesi, D. Bisero, F. Corni, S. Frabboni, R. Tonini and G. Ottaviani, "Visible
photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and
annealing treatments", in Microcrystalline and nanocrystalline semiconductors, edited by L.
Brus, R. W. Collins, M. Hirose and F. Koch, Materials Research Society Symposium
Proceedings Series vol. 358, 157-162 (1995).
|
| 70 |
D. Jonhston, L. Pavesi and M. Henini, "Effect of As overpressure on Si-doped (111)A, (211)A
and (311)A GaAs grown by molecular beam epitaxy", Microelectronics Journal 26, 759-765
(December 1995).
|
| 71 |
L. Pavesi and H. Eduardo Roman, "Experiments and Monte Carlo simulations on the
recombination dynamics in porous silicon", in Microcrystalline and nanocrystalline
semiconductors, edited by L. Brus, R. W. Collins, M. Hirose and F. Koch, Materials Research
Society Symposium Proceedings vol. 358, 549-554 (1995).
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