|
| 50 |
L. Pavesi and M. Ceschini "Stretched exponential decay of the luminescence in porous
silicon", Physical Review Rapid Communications B 48, 17625-17628 (15 December 1993);
errata Physical Review B 50, 2047 (1994).
|
| 51 |
L. Pavesi, M. Ceschini, G. Mariotto, E. Zanghellini, O. Bisi, M. Anderle, L. Calliari, M.
Fedrizzi and L. Fedrizzi, "Spectroscopic investigation of electroluminescent porous silicon",
Journal of Applied Physics 75, 1118-1126 (15 January 1994).
|
| 52 |
A. Borghesi, G. Guizzetti, A. Sassella, O. Bisi and L. Pavesi, "Induction-model analysis of Si-
H stretching mode in porous silicon", Solid State Communications 89, 615 (1994).
|
| 53 |
L. Pavesi, G. Mariotto, JF. Carlin, A. Rudra and L. Colombo, "Confinement effects on the
phonon spectrum of thin InAs/InP strained single quantum wells", Semiconductor Science and
Technology 9, 256-262 (1994).
|
| 54 |
I. Harrison, L. Pavesi, M. Henini and D. Johnston "Annealing effects on Si-doped GaAs
grown on high-index planes by molecular-beam epitaxy", Journal of Applied Physics 75,
3151-3157 (15 March 1994).
|
| 55 |
L. Pavesi and M. Guzzi, "Photoluminescence of AlxGa1-xAs alloys", Journal of Applied
Physics 75, 4779-4842 (15 May 1994).
|
| 56 |
L. Pavesi, G. Giebel, R. Tonini, F. Corni, C. Nobili and G. Ottaviani, "Visible luminescence
from silicon by hydrogen implantation and annealing treatments", Applied Physics Letters 65,
454-456 (25 July 1994).
|
| 57 |
L. Pavesi, G. Giebel, F. Ziglio, G. Mariotto, F. Priolo, S. U. Campisano and C. Spinella,
"Nanocrystal size modifications in porous silicon by preanodization ion implantation",
Applied Physics Letters 65, 2182-2184 (24 October 1994).
|
| 58 |
B. Pivac, B. Rakvin and L. Pavesi, "Paramagnetic centers at and near the Si/SiOx interface in
porous silicon", Applied Physics Letters 65, 3260-3262 (19 December 1994).
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