|
| 37 |
L. Pavesi, F. Piazza, M. Hennini and I. Harrison "Orientation dependence of the Si doping of
GaAs grown by molecular beam epitaxy", Semiconductor Science and Technology 8, 167-171
(1993).
|
| 38 |
H. Cruz, F. Piazza and L. Pavesi "Magnetic field effects on non-periodic superlattice
structures", Semiconductor Science and Technology 8, 254-262 (1993).
|
| 39 |
C. G. Van de Walle and L. Pavesi "Spin-polarized calculations and hyperfine parameters for
hydrogen or muonium in GaAs", Physical Review B47, 4256-4260 (15 February 1993).
|
| 40 |
F. Piazza, L. Pavesi, H. Cruz, M. Micovic and C. Mendo‡a "Vertical transport through Landau
levels in a GaAs/AlxGa1-xAs superlattice in presence of a parallel magnetic field", Physical
Review B47, 4644-4650 (15 February 1993).
|
| 41 |
V. Capozzi, L. Pavesi, J. L. Staehli "Exciton-carrier scattering in gallium selenide", Physical
Review B 47, 6340-6349 (15 March 1993).
|
| 42 |
Nguyen Hong Ky, JD. GaniŠre, M. Gailhanou, B. Blanchard, L. Pavesi, G. Burri, D. Ara£jo
and FK. Reinhart "Self-interstitial mechanism for Zn diffusion-induced disordering of
GaAs/AlxGa1-xAs (x=0.1-1) multiple quantum well structures", Journal of Applied Physics
73, 3769-3781 (15 April 1993).
|
| 43 |
F. Piazza, L. Pavesi, A. Vinattieri, J. Martinez-Pastor and M. Colocci "Influence of miniband
widths and interface disorder on vertical transport in superlattices", Physical Review B 47,
10625-10632 (15 April 1993).
|
| 44 |
A. Borghesi, A. Sassella, B. Pivac and L. Pavesi, "Characterization of porous silicon
inhomogeneities by high spatial resolution infrared spectroscopy", Solid State
Communications 87, 1 (1993).
|
| 45 |
L. Pavesi, F. Piazza, I. Harrison and M. Henini, "Si doping of GaAs grown by molecular beam
epitaxy on different substrate orientations", Materials Science Forum, 117-118, pag. 387-392
(Trans. Tech. Publications, Zurich, 1993).
|
| 46 |
L. Pavesi, L. Calliari, E. Zanghellini, G. Mariotto, M. Anderle and O. Bisi, "Electronic charge
trapping effects in porous silicon", in Optical properties of low dimensional silicon structures,
edited by D. Benshael, L. T. Canham and S. Ossicini, NATO ASI Series (Kluwer Academic
Publisher, Dordrecht 1993) pag. 61-67.
|
| 47 |
L. Pavesi, M. Ceschini and F. Rossi, "Photoluminescence of porous silicon", Journal of
Luminescence 57, 131-135 (1993).
|
| 48 |
L. Calliari, M. Anderle, M. Ceschini, L. Pavesi, G. Mariotto, O. Bisi, "Electron bombardment
effects on light emitting porous silicon", Journal of Luminescence 57, 83-87 (1993).
|
| 49 |
B. Pivac, B. Ravkin and L. Pavesi, "Radiation effects on porous silicon", Journal of
Luminescence 57, 227-229 (1993).
|
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