|
| 26 |
E. Grilli, M. Guzzi, R. Zamboni and L. Pavesi, "High-precision determination of the
temperature dependence of the fundamental energy gap in gallium arsenide" Physical Review
B 45, 1638-1644 (15 January 1992).
|
| 27 |
L. Pavesi, Nguyen Hong Ky, JD. Ganiere, FK. Reinhart, N. Baba-Ali, I. Harrison, B. Tuck and
M. Hennini, "Role of point defects in the silicon diffusion in GaAs and Al0.3Ga0.7As and in
the related superlattice disordering", Journal of Applied Physics 71, 2225-2237 (1 March
1992).
|
| 28 |
D. Araujo, L. Pavesi, Nguyen Hong Ky, JD. Gani‚re and FK. Reinhart, "Low-temperature
EBIC study of Zn-diffused GaAs p-n junctions", physica status solidi (a) 129, 555-567 (1992).
|
| 29 |
M. Guzzi, E. Grilli, S. Oggioni, JL. Staehli, C. Bosio and L. Pavesi, "Indirect-energy-gap
dependence on Al concentration in AlxGa1-xAs alloys", Physical Review B 45, 10951-10957
(15 May 1992).
|
| 30 |
L. Pavesi and P. Giannozzi, "Atomic and molecular hydrogen in gallium arsenide: a
theoretical study", Physical Review B 46, 4621-4629 (15 August 1992).
|
| 31 |
L. Pavesi, "First principle calculations of hydrogen in aluminium arsenide", Solid State
Communications 83, 317-322 (1992).
|
| 32 |
L. Pavesi, G. Mariotto, JF. Carlin, A. Rudra and R. Houdr‚, "Raman study of a single
InP/InAs/InP strained single quantum well", Solid State Communications 84, 705-709 (1992).
|
| 33 |
F. Piazza, L. Pavesi, M. Henini and D. Johnston "Effect of As pressure on Si-doped (111)A
GaAs grown by molecular beam epitaxy: a photoluminescence study", Semiconductor Science
and Technology (Letter to the editor) 7, 1504-1507 (1992).
|
| 34 |
E. Tuncel and L. Pavesi, "Disorder-induced localization in superlattices", Philosophical
Magazine B 65, 213-229 (1992).
|
| 35 |
E. Tuncel, H. Sigg, E. Meier, L. Pavesi, P. Giannozzi, D. Martin, F. Morier-Genoud, F. K.
Reinhart, "Effects of hydrogen in Si-doped AlAs", Materials Science Forum 83-87 pag. 635-
640 (Trans. Tech. Publications, Zurich, 1992).
|
| 36 |
L. Pavesi and P. Giannozzi, "Equilibrium sites and relative stability of atomic and molecular
hydrogen in GaAs", Materials Science Forum 83-87 pag. 611-616 (Trans. Tech. Publications,
Zurich, 1992).
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